NXP BF861C,215 N-Channel JFET, 25 V, Idss 12 → 25mA, 3-Pin SOT-23

  • RS-artikelnummer 124-2284
  • Tillv. art.nr BF861C,215
  • Tillverkare / varumärke NXP
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

N-channel JFET, NXP

Note

NXP is a trademark of NXP B.V.

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Specifikationer
Attribute Value
Channel Type N
Idss Drain-Source Cut-off Current 12 → 25mA
Maximum Drain Source Voltage 25 V
Maximum Gate Source Voltage -25 V, +25 V
Maximum Drain Gate Voltage 25V
Configuration Single
Transistor Configuration Single
Mounting Type Surface Mount
Package Type SOT-23 (TO-236AB)
Pin Count 3
Dimensions 3 x 1.4 x 1mm
Maximum Operating Temperature +150 °C
Height 1mm
Width 1.4mm
Minimum Operating Temperature -65 °C
Length 3mm
12000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 3000)
3,232 kr
(exkl. moms)
4,04 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 +
3,232 kr
9 696,00 kr
Related Products
The BFP840FESD is a high performance HBT (Heterojunction ...
Description:
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
A range of JFET (junction field-effect transistor) and ...
Description:
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.