- RS-artikelnummer:
- 877-2905
- Tillv. art.nr:
- STGW30NC60KD
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2024-10-31
Pris (ex. moms) Var (i ett paket med 5)
78,068 kr
(exkl. moms)
97,585 kr
(inkl. moms)
Enheter | Per unit | Per Pack* |
5 - 5 | 78,068 kr | 390,34 kr |
10 - 95 | 66,362 kr | 331,81 kr |
100 - 495 | 53,08 kr | 265,40 kr |
500 - 995 | 47,218 kr | 236,09 kr |
1000 + | 39,888 kr | 199,44 kr |
- RS-artikelnummer:
- 877-2905
- Tillv. art.nr:
- STGW30NC60KD
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 200 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 24.45mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Energy Rating | 1435mJ |
Gate Capacitance | 2170pF |