onsemi FGA40N65SMD IGBT, 40 A 650 V, 3-Pin TO-3PN, Through Hole
- RS-artikelnummer:
- 864-8782
- Tillv. art.nr:
- FGA40N65SMD
- Tillverkare / varumärke:
- onsemi
22 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 2)
47,575 kr
(exkl. moms)
59,469 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 2 - 18 | 47,575 kr | 95,15 kr |
| 20 - 98 | 39,535 kr | 79,07 kr |
| 100 - 448 | 34,49 kr | 68,98 kr |
| 450 - 898 | 32,55 kr | 65,10 kr |
| 900 + | 29,39 kr | 58,78 kr |
- RS-artikelnummer:
- 864-8782
- Tillv. art.nr:
- FGA40N65SMD
- Tillverkare / varumärke:
- onsemi
Lagstiftning och ursprungsland
Produktdetaljer
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-3PN |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.2 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 864-8782
- Tillv. art.nr:
- FGA40N65SMD
- Tillverkare / varumärke:
- onsemi