STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
- RS-artikelnummer:
- 829-4666
- Tillv. art.nr:
- STGWT60H65DFB
- Tillverkare / varumärke:
- STMicroelectronics
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Pris (ex. moms) Varje
48,02 kr
(exkl. moms)
60,02 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 4 | 48,02 kr |
| 5 - 9 | 45,58 kr |
| 10 - 24 | 41,03 kr |
| 25 - 49 | 36,93 kr |
| 50 + | 35,16 kr |
- RS-artikelnummer:
- 829-4666
- Tillv. art.nr:
- STGWT60H65DFB
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |