Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
- RS-artikelnummer:
- 796-5058
- Tillv. art.nr:
- GT30J121
- Tillverkare / varumärke:
- Toshiba
70 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Varje
39,92 kr
(exkl. moms)
49,90 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 24 | 39,92 kr |
| 25 - 49 | 37,93 kr |
| 50 - 199 | 35,71 kr |
| 200 - 399 | 31,94 kr |
| 400 + | 29,83 kr |
- RS-artikelnummer:
- 796-5058
- Tillv. art.nr:
- GT30J121
- Tillverkare / varumärke:
- Toshiba
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 170 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.9 x 4.8 x 20mm |
| Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 796-5058
- Tillv. art.nr:
- GT30J121
- Tillverkare / varumärke:
- Toshiba