Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole
- RS-artikelnummer:
- 796-5046
- Tillv. art.nr:
- GT15J341
- Tillverkare / varumärke:
- Toshiba
30 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 5)
21,004 kr
(exkl. moms)
26,255 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 5 - 20 | 21,004 kr | 105,02 kr |
| 25 - 245 | 17,878 kr | 89,39 kr |
| 250 - 395 | 15,77 kr | 78,85 kr |
| 400 - 795 | 13,662 kr | 68,31 kr |
| 800 + | 11,844 kr | 59,22 kr |
- RS-artikelnummer:
- 796-5046
- Tillv. art.nr:
- GT15J341
- Tillverkare / varumärke:
- Toshiba
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 15 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 30 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 796-5046
- Tillv. art.nr:
- GT15J341
- Tillverkare / varumärke:
- Toshiba