- RS-artikelnummer:
- 795-8975
- Tillv. art.nr:
- STGB10NC60KDT4
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2024-12-02
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 5)
11,622 kr
(exkl. moms)
14,528 kr
(inkl. moms)
Enheter | Per unit | Per Pack* |
5 - 20 | 11,622 kr | 58,11 kr |
25 - 45 | 11,068 kr | 55,34 kr |
50 - 120 | 9,936 kr | 49,68 kr |
125 - 245 | 8,96 kr | 44,80 kr |
250 + | 8,494 kr | 42,47 kr |
- RS-artikelnummer:
- 795-8975
- Tillv. art.nr:
- STGB10NC60KDT4
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 20 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 65 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |