- RS-artikelnummer:
- 795-7041
- Tillv. art.nr:
- STGB10NC60HDT4
- Tillverkare / varumärke:
- STMicroelectronics
925 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 5)
17,50 kr
(exkl. moms)
21,88 kr
(inkl. moms)
Enheter | Per unit | Per Pack* |
5 - 20 | 17,50 kr | 87,50 kr |
25 - 45 | 16,636 kr | 83,18 kr |
50 - 120 | 14,972 kr | 74,86 kr |
125 - 245 | 13,464 kr | 67,32 kr |
250 + | 12,798 kr | 63,99 kr |
- RS-artikelnummer:
- 795-7041
- Tillv. art.nr:
- STGB10NC60HDT4
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 65 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 9.35 x 4.6mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |