STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 792-5814
- Tillv. art.nr:
- STGW80H65DFB
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2025-05-12
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Pris (ex. moms) Varje
73,42 kr
(exkl. moms)
91,78 kr
(inkl. moms)
| Enheter | Per unit |
| 1 - 4 | 73,42 kr |
| 5 - 9 | 69,76 kr |
| 10 - 24 | 62,77 kr |
| 25 - 49 | 56,45 kr |
| 50 + | 53,79 kr |
- RS-artikelnummer:
- 792-5814
- Tillv. art.nr:
- STGW80H65DFB
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 120 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 469 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |