STMicroelectronics STGP30H65F IGBT, 60 A 600 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 792-5789
- Tillv. art.nr:
- STGP30H65F
- Tillverkare / varumärke:
- STMicroelectronics
Denna produkt har utgått
- RS-artikelnummer:
- 792-5789
- Tillv. art.nr:
- STGP30H65F
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 260 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |