- RS-artikelnummer:
- 329-0969
- Tillv. art.nr:
- HGTG40N60B3
- Tillverkare / varumärke:
- Fairchild Semiconductor
Denna produkt har utgått
- RS-artikelnummer:
- 329-0969
- Tillv. art.nr:
- HGTG40N60B3
- Tillverkare / varumärke:
- Fairchild Semiconductor
Lagstiftning och ursprungsland
Uppfyller ej RoHS
- COO (Country of Origin):
- CN
Produktdetaljer
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 70 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.87 x 4.82 x 20.82mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 329-0969
- Tillv. art.nr:
- HGTG40N60B3
- Tillverkare / varumärke:
- Fairchild Semiconductor