Vishay SUD09P10-195-GE3 IGBT
- RS-artikelnummer:
- 180-8148
- Tillv. art.nr:
- SUD09P10-195-GE3
- Tillverkare / varumärke:
- Vishay
Denna produkt har utgått
- RS-artikelnummer:
- 180-8148
- Tillv. art.nr:
- SUD09P10-195-GE3
- Tillverkare / varumärke:
- Vishay
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
Vishay MOSFET
The Vishay MOSFET is a P-channel, TO-252-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 195mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 32.1W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC converters
• Power switches
• Power switches