ROHM RGT30TM65DGC9, P-Channel IGBT, 14 A 650 V, 3+Tab-Pin TO-220NFM, Through Hole
- RS-artikelnummer:
- 171-5610
- Tillv. art.nr:
- RGT30TM65DGC9
- Tillverkare / varumärke:
- ROHM
Denna produkt har utgått
- RS-artikelnummer:
- 171-5610
- Tillv. art.nr:
- RGT30TM65DGC9
- Tillverkare / varumärke:
- ROHM
Lagstiftning och ursprungsland
Produktdetaljer
RGT30TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Low Collector - Emitter Saturation Voltage
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Low Switching Loss
Short Circuit Withstand Time 5μs
Built in Very Fast & Soft Recovery FRD (RFN - Series)
Pb - free Lead Plating
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 14 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | 30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 32 W |
| Package Type | TO-220NFM |
| Mounting Type | Through Hole |
| Channel Type | P |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Gate Capacitance | 780pF |
- RS-artikelnummer:
- 171-5610
- Tillv. art.nr:
- RGT30TM65DGC9
- Tillverkare / varumärke:
- ROHM