STMicroelectronics STGWT60H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P, Through Hole
- RS-artikelnummer:
- 168-8686
- Tillv. art.nr:
- STGWT60H65DFB
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2024-10-21
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 30)
31,547 kr
(exkl. moms)
39,434 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 30 - 30 | 31,547 kr | 946,41 kr |
| 60 - 120 | 30,741 kr | 922,23 kr |
| 150 + | 29,972 kr | 899,16 kr |
- RS-artikelnummer:
- 168-8686
- Tillv. art.nr:
- STGWT60H65DFB
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- KR
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-3P |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 20.1mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |