- RS-artikelnummer:
- 168-7722
- Tillv. art.nr:
- STGF6NC60HD
- Tillverkare / varumärke:
- STMicroelectronics
Tillfälligt slut i lager – restorder för leverans 2025-03-28
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 50)
12,17 kr
(exkl. moms)
15,21 kr
(inkl. moms)
Enheter | Per unit | Per Tube* |
50 - 50 | 12,17 kr | 608,50 kr |
100 - 200 | 11,56 kr | 578,00 kr |
250 - 450 | 10,407 kr | 520,35 kr |
500 + | 10,345 kr | 517,25 kr |
- RS-artikelnummer:
- 168-7722
- Tillv. art.nr:
- STGF6NC60HD
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 6 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 20 W |
Package Type | TO-220FP |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 16.4mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |