STMicroelectronics STGW60V60F IGBT, 60 A 600 V, 3-Pin TO-247

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COO (Country of Origin): CN
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IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 375 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.75mm
Width 5.15mm
Height 20.15mm
Dimensions 15.75 x 5.15 x 20.15mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +175 °C
240 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Tube of 30)
41,133 kr
(exkl. moms)
51,416 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
30 +
41,133 kr
1 233,99 kr
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