STMicroelectronics STGW60V60DF IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 168-7005
- Tillv. art.nr:
- STGW60V60DF
- Tillverkare / varumärke:
- STMicroelectronics
30 I lager för avsändande samma dag
Lagt till varukorgen
Pris (ex. moms) Var (i ett rör med 30)
36,405 kr
(exkl. moms)
45,506 kr
(inkl. moms)
| Enheter | Per unit | Per Tube* |
| 30 - 30 | 36,405 kr | 1 092,15 kr |
| 60 - 120 | 35,107 kr | 1 053,21 kr |
| 150 + | 34,231 kr | 1 026,93 kr |
- RS-artikelnummer:
- 168-7005
- Tillv. art.nr:
- STGW60V60DF
- Tillverkare / varumärke:
- STMicroelectronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
- RS-artikelnummer:
- 168-7005
- Tillv. art.nr:
- STGW60V60DF
- Tillverkare / varumärke:
- STMicroelectronics