STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220

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COO (Country of Origin): MY
Produktdetaljer

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-220
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.4mm
Width 4.6mm
Height 9.15mm
Dimensions 10.4 x 4.6 x 9.15mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
500 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Tube of 50)
8,917 kr
(exkl. moms)
11,146 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
50 +
8,917 kr
445,85 kr
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