- RS-artikelnummer:
- 145-4447
- Tillv. art.nr:
- FGA40N65SMD
- Tillverkare / varumärke:
- onsemi
Tyvärr har vi inte denna produkt i lager.
Restorder ej möjlig på grund av bristande allokering. Den evt. angivna systemtekniska leveranstiden är inte giltig.
Pris (ex. moms) Var (i ett rör med 30)
31,854 kr
(exkl. moms)
39,818 kr
(inkl. moms)
Enheter | Per unit | Per Tube* |
30 - 30 | 31,854 kr | 955,62 kr |
60 + | 29,939 kr | 898,17 kr |
- RS-artikelnummer:
- 145-4447
- Tillv. art.nr:
- FGA40N65SMD
- Tillverkare / varumärke:
- onsemi
Lagstiftning och ursprungsland
Produktdetaljer
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 349 W |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.2 x 5 x 20.1mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |