Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL

Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): JP
Produktdetaljer

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 35 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 40 W
Package Type TO-220FL
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10mm
Width 4.5mm
Height 15mm
Dimensions 10 x 4.5 x 15mm
Gate Capacitance 900pF
Maximum Operating Temperature +150 °C
I lager för leverans inom 2 arbetsdagar
Pris (ex. moms) Each (In a Pack of 2)
36,705 kr
(exkl. moms)
45,881 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
2 - 2
36,705 kr
73,41 kr
4 - 8
33,09 kr
66,18 kr
10 - 48
30,09 kr
60,18 kr
50 - 98
27,555 kr
55,11 kr
100 +
25,435 kr
50,87 kr
Nästa dag-leverans inte möjlig
Förpackningsalternativ:
Related Products
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide ...
Description:
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and ...
Fuji Electric has been developing IGBT modules designed ...
Description:
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT ...
Optimised IGBTs designed for medium frequency applications with ...
Description:
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's.
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V• Very low ...