Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL

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Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): JP
Produktdetaljer

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 35 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 40 W
Package Type TO-220FL
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 10mm
Width 4.5mm
Height 15mm
Dimensions 10 x 4.5 x 15mm
Maximum Operating Temperature +150 °C
Gate Capacitance 900pF
I lager för leverans inom 2 arbetsdagar
Pris (ex. moms) Each (In a Pack of 2)
36,705 kr
(exkl. moms)
45,881 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
2 - 2
36,705 kr
73,41 kr
4 - 8
33,09 kr
66,18 kr
10 - 48
30,09 kr
60,18 kr
50 - 98
27,555 kr
55,11 kr
100 +
25,435 kr
50,87 kr
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