Renesas Electronics RJP65T43DPM-00#T1 IGBT, 40 A 650 V, 3+Tab-Pin TO-3PFM

Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): MY
Produktdetaljer

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 68.8 W
Package Type TO-3PFM
Mounting Type Through Hole
Channel Type N
Pin Count 3+Tab
Transistor Configuration Single
Length 15.6mm
Width 5.5mm
Height 19.9mm
Dimensions 15.6 x 5.5 x 19.9mm
Gate Capacitance 1550pF
Maximum Operating Temperature +175 °C
Tillfälligt slut i lager – restorder för leverans 2019-12-03
Pris (ex. moms) Each (In a Pack of 2)
40,38 kr
(exkl. moms)
50,48 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
2 - 18
40,38 kr
80,76 kr
20 - 38
36,24 kr
72,48 kr
40 - 198
33,81 kr
67,62 kr
200 - 398
32,78 kr
65,56 kr
400 +
31,69 kr
63,38 kr
Förpackningsalternativ:
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