Renesas Electronics RJH65T47DPQ-A0#T0 IGBT, 90 A 650 V, 3-Pin TO-247A, Through Hole
- RS-artikelnummer:
- 124-0910P
- Tillv. art.nr:
- RJH65T47DPQ-A0#T0
- Tillverkare / varumärke:
- Renesas Electronics
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Lagt till varukorgen
Pris (ex. moms) Varje (levereras i ett rör)
49,375 kr
(exkl. moms)
61,719 kr
(inkl. moms)
| Enheter | Per unit |
| 20 - 38 | 49,375 kr |
| 40 - 198 | 45,705 kr |
| 200 - 398 | 41,875 kr |
| 400 + | 39,29 kr |
- RS-artikelnummer:
- 124-0910P
- Tillv. art.nr:
- RJH65T47DPQ-A0#T0
- Tillverkare / varumärke:
- Renesas Electronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 90 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 375 W |
| Package Type | TO-247A |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.94 x 5.02 x 21.13mm |
| Gate Capacitance | 3000pF |
| Maximum Operating Temperature | +175 °C |
- RS-artikelnummer:
- 124-0910P
- Tillv. art.nr:
- RJH65T47DPQ-A0#T0
- Tillverkare / varumärke:
- Renesas Electronics