Renesas Electronics RJH65T46DPQ-A0#T0 IGBT, 80 A 650 V, 3-Pin TO-247A

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Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): CN
Produktdetaljer

IGBT Discretes, Renesas Electronics

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Maximum Continuous Collector Current 80 A
Maximum Collector Emitter Voltage 650 V
Maximum Gate Emitter Voltage ±30V
Maximum Power Dissipation 340.9 W
Package Type TO-247A
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 15.94mm
Width 5.02mm
Height 21.13mm
Dimensions 15.94 x 5.02 x 21.13mm
Gate Capacitance 3000pF
Maximum Operating Temperature +175 °C
Tillfälligt slut i lager – restorder för leverans 2021-01-06
Pris (ex. moms) Each (In a Pack of 2)
56,87 kr
(exkl. moms)
71,09 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
2 - 8
56,87 kr
113,74 kr
10 +
50,925 kr
101,85 kr
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