onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

RS-artikelnummer:: 195-8770
Tillv. art.nr:: NXH100B120H3Q0STG
Tillverkare / varumärke:: onsemi

onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

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769,29 kr

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961,61 kr

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Enheter	Per unit	Per Tray*
24 +	769,29 kr	18 462,96 kr

RS-artikelnummer:: 195-8770
Tillv. art.nr:: NXH100B120H3Q0STG
Tillverkare / varumärke:: onsemi

Datablad

Datasheet NXH100B120H3Q0STG

Lagstiftning och ursprungsland

Produktdetaljer

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage

Specifikationer

Attribute	Value
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	186 W
Package Type	Q0BOOST
Configuration	Dual
Mounting Type	Surface Mount
Channel Type	N
Pin Count	22
Transistor Configuration	Dual
Dimensions	66.2 x 32.8 x 11.9mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+150 °C

RS-artikelnummer:: 195-8770
Tillv. art.nr:: NXH100B120H3Q0STG
Tillverkare / varumärke:: onsemi

Datasheet NXH100B120H3Q0STG