- RS-artikelnummer:
- 168-4635
- Tillv. art.nr:
- 2MBI450VN-120-50
- Tillverkare / varumärke:
- Fuji Electric
Denna produkt har utgått
- RS-artikelnummer:
- 168-4635
- Tillv. art.nr:
- 2MBI450VN-120-50
- Tillverkare / varumärke:
- Fuji Electric
Lagstiftning och ursprungsland
- COO (Country of Origin):
- JP
Produktdetaljer
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 450 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 2.27 kW |
Package Type | M254 |
Configuration | Series |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 11 |
Transistor Configuration | Series |
Dimensions | 150 x 62 x 17mm |
Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 168-4635
- Tillv. art.nr:
- 2MBI450VN-120-50
- Tillverkare / varumärke:
- Fuji Electric