Fuji Electric 7MBR75VB-120-50, M712 3 Phase Bridge IGBT Module, 75 A max, 1200 V, Through Hole

  • RS-artikelnummer 110-9137
  • Tillv. art.nr 7MBR75VB-120-50
  • Tillverkare / varumärke Fuji Electric
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

IGBT Modules 7-Pack, Fuji Electric

V-Series

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifikationer
Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 75 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Through Hole
Package Type M712
Pin Count 24
Maximum Power Dissipation 385 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +150 °C
Width 62mm
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