ON Semiconductor, FJPF2145TU, Emmitter Switched

  • RS-artikelnummer 145-4678
  • Tillv. art.nr FJPF2145TU
  • Tillverkare / varumärke ON Semiconductor
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): KR
Produktdetaljer

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 5 A
Maximum Collector Source Voltage 0.209V
Maximum Power Dissipation 40 W
Minimum DC Current Gain 8
Mounting Type Through Hole
Package Type TO-220F
Pin Count 3
Maximum Base Source Voltage ±20V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Base Current 1.5A
Category Power Transistor
Dimensions 10.36 x 4.9 x 16.07mm
Height 16.07mm
Length 10.36mm
Width 4.9mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +125 °C
400 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Tube of 50)
7,668 kr
(exkl. moms)
9,585 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
50 +
7,668 kr
383,40 kr