- RS-artikelnummer:
- 186-7921
- Tillv. art.nr:
- FQD18N20V2TM
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-06-26
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 10)
11,401 kr
(exkl. moms)
14,251 kr
(inkl. moms)
Enheter | Per unit | Per Pack* |
10 - 90 | 11,401 kr | 114,01 kr |
100 - 240 | 8,539 kr | 85,39 kr |
250 - 490 | 8,439 kr | 84,39 kr |
500 - 990 | 7,264 kr | 72,64 kr |
1000 + | 5,922 kr | 59,22 kr |
- RS-artikelnummer:
- 186-7921
- Tillv. art.nr:
- FQD18N20V2TM
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
15A, 200V, RDS(on) = 140mΩ(Max.) @VGS = 10 V, ID = 7.5A
Low gate charge ( Typ. 20nC)
Low Crss ( Typ. 25pF)
Applications
LCD TV
PDP TV
LED TV
Low gate charge ( Typ. 20nC)
Low Crss ( Typ. 25pF)
Applications
LCD TV
PDP TV
LED TV
Specifikationer
Attribute | Value |
---|---|
Package Type | DPAK |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 83 W |
Pin Count | 2 + Tab |
Number of Elements per Chip | 1 |
Dimensions | 6.73 x 6.22 x 2.26mm |
Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 186-7921
- Tillv. art.nr:
- FQD18N20V2TM
- Tillverkare / varumärke:
- onsemi