onsemi TIP121G NPN Darlington Transistor, 5 A dc 80 V dc HFE:1000, 3-Pin TO-220
- RS-artikelnummer:
- 186-8205
- Tillv. art.nr:
- TIP121G
- Tillverkare / varumärke:
- onsemi
Tillfälligt slut i lager – restorder för leverans 2024-08-02
Lagt till varukorgen
Pris (ex. moms) Var (i ett paket med 25)
8,26 kr
(exkl. moms)
10,32 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 25 - 75 | 8,26 kr | 206,50 kr |
| 100 - 475 | 5,776 kr | 144,40 kr |
| 500 - 975 | 5,008 kr | 125,20 kr |
| 1000 - 2475 | 4,25 kr | 106,25 kr |
| 2500 + | 3,992 kr | 99,80 kr |
- RS-artikelnummer:
- 186-8205
- Tillv. art.nr:
- TIP121G
- Tillverkare / varumärke:
- onsemi
Datablad
Lagstiftning och ursprungsland
- COO (Country of Origin):
- CN
Produktdetaljer
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN), TIP125, TIP126, TIP127 (PNP) are complementary devices.
High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage @ 100 mA
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Collector-Emitter Sustaining Voltage @ 100 mA
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Specifikationer
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 5 A dc |
| Maximum Collector Emitter Voltage | 80 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 1000 |
| Maximum Collector Base Voltage | 80 V dc |
| Maximum Collector Emitter Saturation Voltage | 4 V dc |
| Height | 15.75mm |
| Minimum Operating Temperature | -65 °C |
| Dimensions | 10.53 x 4.83 x 15.75mm |
| Maximum Power Dissipation | 65 W |
| Width | 4.83mm |
| Maximum Operating Temperature | +150 °C |
| Length | 10.53mm |