Infineon BCV49H6327XTSA1 NPN Darlington Transistor, 500 mA 60 V HFE:2000, 3-Pin SOT-89

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Bipolar Transistors, Infineon

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	500 mA
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	10 V
Package Type	SOT-89
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	2000
Maximum Base Emitter Saturation Voltage	1.5 V
Maximum Collector Base Voltage	80 V
Maximum Collector Emitter Saturation Voltage	1 V
Maximum Collector Cut-off Current	10µA
Height	1.5mm
Base Current	100mA
Maximum Power Dissipation	1 W
Dimensions	4.5 x 2.5 x 1.5mm
Maximum Operating Temperature	+150 °C
Width	2.5mm
Length	4.5mm