onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

RS-artikelnummer:: 463-000
Tillv. art.nr:: MJ11016G
Tillverkare / varumärke:: onsemi

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

264 I lager för avsändande samma dag

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Pris (ex. moms) Var (i ett paket med 2)

62,66 kr

(exkl. moms)

78,32 kr

(inkl. moms)

Enheter	Per unit	Per Pack*
2 - 8	62,66 kr	125,32 kr
10 - 98	50,015 kr	100,03 kr
100 - 198	44,635 kr	89,27 kr
200 - 498	42,14 kr	84,28 kr
500 +	39,315 kr	78,63 kr

RS-artikelnummer:: 463-000
Tillv. art.nr:: MJ11016G
Tillverkare / varumärke:: onsemi

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity

Versions Available:
463-000 - pack of 2
100-7565 - tray of 100

Specifikationer

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+200 °C
Dimensions	39.37 x 26.67 x 8.51mm
Length	39.37mm
Width	26.67mm
Height	8.51mm

RS-artikelnummer:: 463-000
Tillv. art.nr:: MJ11016G
Tillverkare / varumärke:: onsemi