Nexperia PBLS2001D,115 Dual NPN + PNP Transistor, 1 A, 20 V, 6-Pin SOT-457 (SC-74)

  • RS-artikelnummer 816-0664
  • Tillv. art.nr PBLS2001D,115
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): MY
Produktdetaljer

PBLS Series BISS Loadswitch, Nexperia

Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
Low ’threshold’ voltage (<1V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
SMT packages SOT363 (Y), SOT666 (V)

Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 20 V
Package Type SOT-457 (SC-74)
Mounting Type Surface Mount
Maximum Power Dissipation 600 mW
Minimum DC Current Gain 220
Transistor Configuration N+P Loadswitch
Maximum Collector Base Voltage -20 V
Maximum Emitter Base Voltage -5 V
Maximum Operating Frequency 100 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Collector Emitter Saturation Voltage -90 mV
Dimensions 3.1 x 1.7 x 1.1mm
Maximum Operating Temperature +150 °C
Length 3.1mm
Maximum Base Emitter Saturation Voltage -1.1 V
Height 1.1mm
Width 1.7mm
Minimum Operating Temperature -65 °C
Tillfälligt slut i lager – restorder för leverans när den finns i lager
Pris (ex. moms) Each (In a Pack of 30)
1,816 kr
(exkl. moms)
2,27 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
30 +
1,816 kr
54,48 kr
Förpackningsalternativ:
Related Products
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
A range of ultra-low-noise wideband NPN bipolar RF ...
Description:
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. ...