BIP C77 NPN 4A 60V

  • RS-artikelnummer 184-4913
  • Tillv. art.nr MJE800G
  • Tillverkare / varumärke ON Semiconductor
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): MY
Produktdetaljer

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP), and MJE800, MJE802, MJE803 (NPN) are complementary devices.

High DC Current Gain - hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
Choice of Packages - MJE700 and MJE800 series

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 80 V dc
Package Type TO-225
Mounting Type Through Hole
Maximum Power Dissipation 40 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 80 V dc
Maximum Emitter Base Voltage 5 V dc
Maximum Operating Frequency 1 MHz
Pin Count 3
Number of Elements per Chip 1
Transistor Material Si
Width 3mm
Minimum Operating Temperature -55 °C
Dimensions 7.8 x 3 x 11.1mm
Height 11.1mm
Maximum Operating Temperature +150 °C
Length 7.8mm
Maximum Collector Emitter Saturation Voltage 3 V dc
2300 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 25)
3,722 kr
(exkl. moms)
4,652 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
25 - 50
3,722 kr
93,05 kr
75 - 100
2,895 kr
72,375 kr
125 - 225
2,606 kr
65,15 kr
250 - 350
2,358 kr
58,95 kr
375 +
2,192 kr
54,80 kr
Förpackningsalternativ:
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