Infineon BFP840FESDH6327XTSA1 NPN Transistor, 35 mA, 2 V, 2.25 V, 4-Pin TSFP

  • RS-artikelnummer 170-2255
  • Tillv. art.nr BFP840FESDH6327XTSA1
  • Tillverkare / varumärke Infineon
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2 V, 2.25 V
Package Type TSFP
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.6 V, 2.9 V
Maximum Operating Frequency 85 GHz
Pin Count 4
Number of Elements per Chip 1
Height 0.55mm
Automotive Standard AEC-Q101
Width 0.8mm
Transistor Material SiGe
Dimensions 1.4 x 0.8 x 0.55mm
Length 1.4mm
Maximum Operating Temperature +150 °C
Tillfälligt slut i lager – restorder för leverans 2020-06-23
Pris (ex. moms) Each (On a Reel of 3000)
1,56 kr
(exkl. moms)
1,95 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 - 3000
1,56 kr
4 680,00 kr
6000 - 6000
1,52 kr
4 560,00 kr
9000 +
1,482 kr
4 446,00 kr
Related Products
These are the standard products of "digital transistors". ...
Description:
These are the standard products of "digital transistors". Standard digital transistorBuilt-In Biasing ResistorsSmall Surface Mount PackagePb FreeApplications:Portable Data TerminalCoin Processing MachinesDigital Multimeter: Handy TypeMotor Control: Brushless DCPLC (Programmable Logic Controller)AC ServoNetwork ...
Various products are available in lineup developed focusing ...
Description:
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market. Low VCE(sat)Small Surface Mount PackagePb Free.
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.