Infineon BFP840FESDH6327XTSA1 NPN Transistor, 35 mA, 2 V, 2.25 V, 4-Pin TSFP

  • RS-artikelnummer 170-2255
  • Tillv. art.nr BFP840FESDH6327XTSA1
  • Tillverkare / varumärke Infineon
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 35 mA
Maximum Collector Emitter Voltage 2 V, 2.25 V
Package Type TSFP
Mounting Type Surface Mount
Maximum Power Dissipation 75 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 2.6 V, 2.9 V
Maximum Operating Frequency 85 GHz
Pin Count 4
Number of Elements per Chip 1
Width 0.8mm
Dimensions 1.4 x 0.8 x 0.55mm
Transistor Material SiGe
Length 1.4mm
Height 0.55mm
Maximum Operating Temperature +150 °C
Automotive Standard AEC-Q101
3000 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (On a Reel of 3000)
1,491 kr
(exkl. moms)
1,864 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
3000 - 3000
1,491 kr
4 473,00 kr
6000 - 6000
1,453 kr
4 359,00 kr
9000 +
1,416 kr
4 248,00 kr
Related Products
Low VCEsat (BISS) power transistors single, Meeting the ...
Description:
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions ...
Low VCEsat (BISS) power transistors single, Meeting the ...
Description:
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions ...
DTC143ZE is a digital transistor suitable for inverter, ...
Description:
DTC143ZE is a digital transistor suitable for inverter, interface and driver applications. Standard digital transistorBuilt-In Biasing ResistorsSmall Surface Mount PackagePb FreeApplications:Portable Data TerminalCoin Processing MachinesDigital Multimeter: Handy TypeMotor Control: Brushless DCPLC (Programmable ...
A range of NXP BISS (Breakthrough In Small ...
Description:
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results ...