STMicroelectronics BUL128D-B NPN Transistor, 4 A, 400 V, 3-Pin TO-220

Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): MY
Produktdetaljer

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 4 A
Maximum Collector Emitter Voltage 400 V
Package Type TO-220
Mounting Type Through Hole
Maximum Power Dissipation 70 W
Minimum DC Current Gain 10
Transistor Configuration Single
Maximum Collector Base Voltage 700 V
Maximum Emitter Base Voltage 9 V
Pin Count 3
Number of Elements per Chip 1
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage 1.3 V
Length 10.4mm
Maximum Collector Emitter Saturation Voltage 0.5 V
Height 9.15mm
Width 4.6mm
Dimensions 9.15 x 10.4 x 4.6mm
Minimum Operating Temperature -65 °C
1100 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Tube of 50)
4,938 kr
(exkl. moms)
6,172 kr
(inkl. moms)
Enheter
Per unit
Per Tube*
50 +
4,938 kr
246,90 kr
Related Products
60V, 3 A NPN high power bipolar transistor, ...
Description:
60V, 3 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT60603PY. High thermal power dissipation capabilityHigh temperature applications up to 175 °CReduced Printed Circuit Board ...
100 V, 3 A NPN high power bipolar ...
Description:
100 V, 3 A NPN high power bipolar transistor, NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement PHPT61003PY. High thermal power dissipation capabilitySuitable for high temperature applications up to 175 °CReduced ...
Low VCEsat (BISS) power transistors single, Meeting the ...
Description:
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions ...
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.