Nexperia PBSS4350SPN,115 Dual NPN + PNP Transistor, 2.7 A, 50 V, 8-Pin SOT-96

  • RS-artikelnummer 165-8637
  • Tillv. art.nr PBSS4350SPN,115
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): TH
Produktdetaljer

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 2.7 A
Maximum Collector Emitter Voltage 50 V
Package Type SOT-96
Mounting Type Surface Mount
Maximum Power Dissipation 2 W
Minimum DC Current Gain 200 (PNP), 300 (NPN)
Transistor Configuration Isolated
Maximum Collector Base Voltage -50 V, 50 V
Maximum Emitter Base Voltage -5 (PNP) V, 5 (NPN) V
Maximum Operating Frequency 1 MHz
Pin Count 8
Number of Elements per Chip 2
Length 5mm
Dimensions 5 x 4 x 1.75mm
Height 1.75mm
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage -1.1 (PNP) V, 1.2 (NPN) V
Width 4mm
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage -90 (NPN) mV, 340 (NPN) mV
Tillfälligt slut i lager – restorder för leverans 2020-04-02
Pris (ex. moms) Each (On a Reel of 1000)
2,004 kr
(exkl. moms)
2,505 kr
(inkl. moms)
Enheter
Per unit
Per Reel*
1000 +
2,004 kr
2 004,00 kr
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