Infineon BCV62BE6327HTSA1 Dual PNP Transistor, 100 mA, 30 V, 4-Pin SOT-143

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Matched dual NPN and PNP transistors with a common base connection for use as current mirror pairs.

Good thermal coupling and V_BE matching
High current gain
Low collector-emitter saturation voltage

Bipolar Transistors, Infineon

Attribute	Value
Transistor Type	PNP
Maximum DC Collector Current	100 mA
Maximum Collector Emitter Voltage	30 V
Package Type	SOT-143
Mounting Type	Surface Mount
Maximum Power Dissipation	300 mW
Transistor Configuration	Current Mirror
Maximum Collector Base Voltage	30 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	250 MHz
Pin Count	4
Number of Elements per Chip	2
Dimensions	2.9 x 1.3 x 1mm
Maximum Operating Temperature	+150 °C