Nexperia PBSS5160DS,115 Dual PNP Transistor, 1 A, 60 V, 6-Pin TSOP

  • RS-artikelnummer 485-408
  • Tillv. art.nr PBSS5160DS,115
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
Produktdetaljer

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

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Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 700 mW
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 185 MHz
Pin Count 6
Number of Elements per Chip 2
Maximum Collector Emitter Saturation Voltage 0.33 V
Dimensions 1 x 3.1 x 1.7mm
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage 1.1 V
2260 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 20)
2,26 kr
(exkl. moms)
2,82 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
20 - 40
2,26 kr
45,20 kr
60 - 100
1,758 kr
35,16 kr
120 - 220
1,536 kr
30,72 kr
240 - 460
1,236 kr
24,72 kr
480 +
1,076 kr
21,52 kr
Förpackningsalternativ:
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