NXP PBSS4160DS,115 Dual NPN Transistor, 1 A, 60 V, 6-Pin TSOP

  • RS-artikelnummer 485-391
  • Tillv. art.nr PBSS4160DS,115
  • Tillverkare / varumärke Nexperia
Datablad
Lagstiftning och ursprungsland
RoHS-Försäkran
COO (Country of Origin): MY
Produktdetaljer

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

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Bipolar Transistors, Nexperia

Specifikationer
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 1 A
Maximum Collector Emitter Voltage 60 V
Package Type TSOP
Mounting Type Surface Mount
Maximum Power Dissipation 700 mW
Minimum DC Current Gain 100
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 220 MHz
Pin Count 6
Number of Elements per Chip 2
Length 3.1mm
Maximum Operating Temperature +150 °C
Dimensions 1 x 3.1 x 1.7mm
Width 1.7mm
Height 1mm
Maximum Base Emitter Saturation Voltage 1.1 V
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage 0.25 V
460 I lager för leverans inom 1 arbetsdagar
Pris (ex. moms) Each (In a Pack of 20)
0,96 kr
(exkl. moms)
1,20 kr
(inkl. moms)
Enheter
Per unit
Per Pack*
20 +
0,96 kr
19,20 kr
Förpackningsalternativ:
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