BJT & Bipolar Transistors

A Bipolar Transistor or BJT (Bipolar Junction Transistor) is a solid state, three-pin device made from three layers of silicon. A BJT is designed to amplify current, bipolar transistors can also function as a switch. There are two main types of transistor, PNP (positive negative positive) or NPN (negative positive negative).
How a Bipolar transistor is made
A bipolar transistor is made by joining two signal diodes back to back creating two PN junctions connected in series, sharing a common P or N terminal. By nature, silicon does not normally conduct electricity well. However, when silicon is treated with certain chemicals or impurities we can make the material and electrons behave in a different way. This process is called doping. The doping process improves the semiconductors ability to conduct electricity.
What does a bipolar transistor do?
As we said before a bipolar transistor has two possible functions, switching, and amplification. Due to the devices three layers of doped semiconductor material, supplying the transistor with a signal voltage enables the discrete component to act as an insulator or a conductor. This clever change provides the transistors with two basic functions, switching (digital) electronics or amplification (analog) electronics.
Types of transistor
Transistors are available in panel, surface and through hole mounting options in plastic package or metal can versions. All have three terminals or pins, the Base, the Collector, and the Emitter.
Where are bipolar transistors used?
Transistors are one of the most widely used discrete components in electronic designs and circuits. Transistors are used for the amplification of all types of electrical signals in circuits made up of individual components rather than ICs (integrated circuits).

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Beskrivning Pris Transistor Type Maximum DC Collector Current Maximum Collector Emitter Voltage Package Type Mounting Type Maximum Power Dissipation Minimum DC Current Gain Transistor Configuration Maximum Collector Base Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Pin Count Number of Elements per Chip Automotive Standard
RS-artikelnummer 921-5683
Tillv. art.nrHFA3101BZ
91,41 kr
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NPN 30 mA 8 V SOIC Surface Mount - 40 Complex 12 V 5.5 V 10000 MHz 8 6 -
RS-artikelnummer 921-5942
Tillv. art.nrHFA3096BZ
69,17 kr
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NPN + PNP 65 mA 8 V SOIC Surface Mount 150 mW 20 Isolated 12 V 5.5 V 5500 (PNP) MHz, 8000 (NPN) MHz 16 5 -
RS-artikelnummer 146-2424
Tillv. art.nrHFA3096BZ
59,634 kr
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NPN + PNP 65 mA 8 V SOIC Surface Mount 150 mW 20 Isolated 12 V 5.5 V 5500 (PNP) MHz, 8000 (NPN) MHz 16 5 -
RS-artikelnummer 121-6876
Tillv. art.nr2SA1615-Z-E1-AZ
8,168 kr
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PNP 10 A 20 V DPAK (TO-252) Surface Mount 15 W 160 Single -30 V -10 V - 3 1 -
RS-artikelnummer 121-6877
Tillv. art.nr2SB1261(0)-Z-E1-AZ
5,842 kr
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PNP 3 A 60 V DPAK (TO-252) Surface Mount 10 W 50 Single -60 V -7 V - 3 1 -
RS-artikelnummer 121-6878
Tillv. art.nr2SD1584-Z-E1-AZ
9,358 kr
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NPN 3 A 60 V DPAK (TO-252) Surface Mount 2 W 500 Single 60 V 7 V - 3 1 -
RS-artikelnummer 496-745
Tillv. art.nrHFA3127BZ
38,73 kr
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NPN 65 mA 8 V SOIC Surface Mount 150 mW 40 Isolated 12 V 5.5 V 8000 MHz 16 5 -
RS-artikelnummer 923-1335
Tillv. art.nrHFA3127BZ
75,796 kr
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NPN 65 mA 8 V SOIC Surface Mount 150 mW 40 Isolated 12 V 5.5 V 8000 MHz 16 5 -
RS-artikelnummer 921-5428
Tillv. art.nrHFA3127BZ
87,89 kr
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NPN 65 mA 8 V SOIC Surface Mount 150 mW 40 Isolated 12 V 5.5 V 8000 MHz 16 5 -