- RS-artikelnummer:
- 153-1981
- Tillv. art.nr:
- BSS84AKV,115
- Tillverkare / varumärke:
- Nexperia
Denna produkt har utgått
- RS-artikelnummer:
- 153-1981
- Tillv. art.nr:
- BSS84AKV,115
- Tillverkare / varumärke:
- Nexperia
Lagstiftning och ursprungsland
Produktdetaljer
50 V, 170 mA dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
Specifikationer
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | -0.17 A |
Maximum Drain Source Voltage | -50 V |
Package Type | SOT-666 |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 13.5 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | -2.1V |
Minimum Gate Threshold Voltage | -1.1V |
Maximum Power Dissipation | 1.09 W |
Maximum Gate Source Voltage | 20 V |
Number of Elements per Chip | 1 |
Length | 1.7mm |
Typical Gate Charge @ Vgs | 0.26 nC @ 2.5 V |
Width | 1.3mm |
Maximum Operating Temperature | +150 °C |
Automotive Standard | AEC-Q101 |
Minimum Operating Temperature | -55 °C |
Height | 0.6mm |