Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole
- RS-artikelnummer:
- 124-3700
- Tillv. art.nr:
- RJH60D3DPP-M0#T2
- Tillverkare / varumärke:
- Renesas Electronics
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Pris (ex. moms) Var (i ett paket med 2)
36,705 kr
(exkl. moms)
45,881 kr
(inkl. moms)
| Enheter | Per unit | Per Pack* |
| 2 - 2 | 36,705 kr | 73,41 kr |
| 4 - 8 | 33,09 kr | 66,18 kr |
| 10 - 48 | 30,09 kr | 60,18 kr |
| 50 - 98 | 27,555 kr | 55,11 kr |
| 100 + | 25,435 kr | 50,87 kr |
- RS-artikelnummer:
- 124-3700
- Tillv. art.nr:
- RJH60D3DPP-M0#T2
- Tillverkare / varumärke:
- Renesas Electronics
Lagstiftning och ursprungsland
- COO (Country of Origin):
- JP
Produktdetaljer
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 35 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 40 W |
| Package Type | TO-220FL |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10 x 4.5 x 15mm |
| Gate Capacitance | 900pF |
| Maximum Operating Temperature | +150 °C |
- RS-artikelnummer:
- 124-3700
- Tillv. art.nr:
- RJH60D3DPP-M0#T2
- Tillverkare / varumärke:
- Renesas Electronics