- RS-artikelnummer:
- 121-6899
- Tillv. art.nr:
- RJP4010AGE-01#P5
- Tillverkare / varumärke:
- Renesas Electronics
Denna produkt har utgått
- RS-artikelnummer:
- 121-6899
- Tillv. art.nr:
- RJP4010AGE-01#P5
- Tillverkare / varumärke:
- Renesas Electronics
Lagstiftning och ursprungsland
Produktdetaljer
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifikationer
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 150 (Pulse) A |
Maximum Collector Emitter Voltage | 400 V |
Maximum Gate Emitter Voltage | ±6V |
Maximum Power Dissipation | 1.6 W |
Package Type | TSOJ |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 8 |
Transistor Configuration | Single |
Dimensions | 3.1 x 2.5 x 1mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |
Gate Capacitance | 5100pF |