N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220AB Infineon IRF60B217
- RS-artikelnummer:
- 123-6144
- Tillv. art.nr:
- IRF60B217
- Tillverkare / varumärke:
- Infineon
Denna produkt har utgått
- RS-artikelnummer:
- 123-6144
- Tillv. art.nr:
- IRF60B217
- Tillverkare / varumärke:
- Infineon
Lagstiftning och ursprungsland
Produktdetaljer
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifikationer
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 83 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V |
| Width | 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Series | StrongIRFET |
| Forward Diode Voltage | 1.2V |
| Height | 16.51mm |
- RS-artikelnummer:
- 123-6144
- Tillv. art.nr:
- IRF60B217
- Tillverkare / varumärke:
- Infineon